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苏州硅能半导体科技股份有限公司
主营：场效应管,电源,充电器,硅能半导体 - 13073303083
苏州硅能半导体科技股份有限公司
主营：场效应管,电源,充电器,硅能半导体
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Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA60 VZero Gate Voltage Drain CurrentIDS =60V,VGS=0V 1μAGate-Body Leakage Current IGSSVGS=±5V,VDS=0V 100nAVGS=±10V,VDS=0V 150nAVGS=±20V,VDS=0V 10uAGate-Source Breakdown VoltageBVGSOVDS=0V, IG=±250uA±20 VON CHARACTERISTICS (Note 3)Gate Threshold Voltage VGS(th)VDS=VGS,ID=250μA1 2.5VDrain-Source On-State Resistance(ON)VGS=10V, ID=0.5A 2.7ΩVGS=5V, ID=0.05A 3VGS=3.3V, ID=0.05A 4Forward TransconductancegF=10V,ID=0.2A0.08 SDYNAMIC CHARACTERISTICS (Note4)Input CapacitanceCls=25V,VGS=0V,
F=1.0MHz 30 PFOutput CapacitanceCoss 6 PFReverse Transfer CapacitanceCrss 3 PFSWITCHING CHARACTERISTICS (Note 4)Turn-on Delay Time td(on)VDD=30V,VGS=10V,
RGEN=10Ω，RL=150Ω
ID=0.2A 25nSTurn-Off Delay Time td(off) 35nSTotal Gate Charge QgVDS=10V,ID=0.25A,VGS=4.5V 0.40.6nCDRAIN-SOURCE DIODE CHARACTERISTICSDiode Forward Voltage (Note 3)VSDVGS=0V,IS=0.2A 1.3V